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dc.contributor.authorParashar, Sachin-
dc.contributor.authorSarathy, K Vijaya-
dc.contributor.authorVanitha, P V-
dc.contributor.authorRaju, A R-
dc.contributor.authorRao, C N R-
dc.identifier.citationJournal Of Physics And Chemistry Of Solids 62(8), 1387-1391 (2001)en_US
dc.descriptionRestricted Accessen_US
dc.description.abstractProperties of thin films of hole-doped Pr0.6Ca0.4MnO3 and electron-doped Pr0.4Ca0.6MnO3 are compared. While both are charge-ordered insulators, the hole-doped manganate undergoes an insulator-metal (I-M) transition on the application of magnetic-fields, but the electron-doped manganate does not. Substitution of 3% Cr3+ Or Ru4+ in the Mn site has greater effect on the hole-doped manganate. Electrical fields, however, have similar effects on the hole-doped and electron-doped manganates, both exhibiting current-induced I-M transitions. The study not only establishes that the mechanism of the I-M transition brought about by electric and magnetic fields are different, but also suggests that the electronic structures of the hole-doped and electron-doped manganates have basic differences. (C) 2001 Elsevier Science Ltd. All rights reserved.en_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.rights© 2001 Elsevier Science Ltden_US
dc.subjectelectronic materialsen_US
dc.subjectvapor depositionen_US
dc.subjectelectrical conductivityen_US
dc.subjectRare-Earth Manganatesen_US
dc.subjectCharge-Ordered Statesen_US
dc.titleA comparative study of thin films of hole-doped Pr0.6Ca0.4MnO3 and electron-doped Pr0.4Ca0.6MnO3en_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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