Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/880
Title: A comparative study of thin films of hole-doped Pr0.6Ca0.4MnO3 and electron-doped Pr0.4Ca0.6MnO3
Authors: Parashar, Sachin
Sarathy, K Vijaya
Vanitha, P V
Raju, A R
Rao, C N R
Keywords: electronic materials
oxides
vapor deposition
electrical conductivity
Rare-Earth Manganates
Charge-Ordered States
Manganites
Pr1-Xcaxmno3
Issue Date: Jul-2001
Publisher: Pergamon-Elsevier Science Ltd
Citation: Journal Of Physics And Chemistry Of Solids 62(8), 1387-1391 (2001)
Abstract: Properties of thin films of hole-doped Pr0.6Ca0.4MnO3 and electron-doped Pr0.4Ca0.6MnO3 are compared. While both are charge-ordered insulators, the hole-doped manganate undergoes an insulator-metal (I-M) transition on the application of magnetic-fields, but the electron-doped manganate does not. Substitution of 3% Cr3+ Or Ru4+ in the Mn site has greater effect on the hole-doped manganate. Electrical fields, however, have similar effects on the hole-doped and electron-doped manganates, both exhibiting current-induced I-M transitions. The study not only establishes that the mechanism of the I-M transition brought about by electric and magnetic fields are different, but also suggests that the electronic structures of the hole-doped and electron-doped manganates have basic differences. (C) 2001 Elsevier Science Ltd. All rights reserved.
Description: Restricted Access
URI: http://hdl.handle.net/10572/880
Other Identifiers: 0022-3697
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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