Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/765
Title: Anharmonic Elastic and Phonon Properties of Si
Authors: Vanderbilt, D
Taole, S H
Narasimhan, Shobhana
Keywords: Elasticity
elastic constants
Phonon states and bands
normal modes
phonon dispersion
Silicon
Issue Date: 15-Sep-1989
Publisher: American Physical Society
Citation: Physical Review B 40(8), 5657-5668 (1989)
Abstract: A unified framework is suggested for the discussion of anharmonic phonon coupling constants and anharmonic elastic constants in diamond-structure materials. A summary is given, within this framework, of those anharmonic constants which have previously been determined experimentally or theoretically for silicon. New local-density total-energy calculations for X-point phonons in Si are used to add to this database of known anharmonic constants. It is proposed that empirical models for interatomic potentials should be constrained to fit this database. A generalized Keating model which has been fitted in this way, with two- and three-body couplings of third and fourth order, is presented. It can be used to calculate arbitrary anharmonic phonon couplings through fourth order.
Description: Restricted Access
URI: http://hdl.handle.net/10572/765
Other Identifiers: 1098-0121
Appears in Collections:Research Articles (Shobhana Narasimhan)

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