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dc.contributor.authorLate, Dattatray J-
dc.contributor.authorMaitra, Urmimala-
dc.contributor.authorPanchakarla, L S-
dc.contributor.authorWaghmare, Umesh V-
dc.contributor.authorRao, C N R-
dc.date.accessioned2012-03-21T08:32:04Z-
dc.date.available2012-03-21T08:32:04Z-
dc.date.issued2011-02-09-
dc.identifier0953-8984en_US
dc.identifier.citationJournal of Physics: Condensed Matter 23(5), 055303-(1-5) (2011)en_US
dc.identifier.urihttp://hdl.handle.net/10572/704-
dc.descriptionRestricted Accessen_US
dc.description.abstractTemperature effects on the various features in the Raman spectra of several graphene samples and graphene nanoribbons have been investigated over the temperature range 77-573 K. The temperature coefficient of the G and 2D band frequencies are found to depend on the number of layers, the former decreasing with the increase in the number of layers. The number of layers also affects the temperature coefficients of the FWHMs of these bands. Doping of graphene affects these Raman features significantly. The defect-related bands D and D' bands are not sensitive to the number of layers or doping. We can understand the observed temperature effects on the basis of electron-phonon coupling, thermal expansion and anharmonic phonon-phonon interactions.en_US
dc.description.urihttp://dx.doi.org/10.1088/0953-8984/23/5/055303en_US
dc.language.isoenen_US
dc.publisherIOP Publishing Ltden_US
dc.rights© 2011 IOP Publishing Ltden_US
dc.subjectWall Carbon Nanotubesen_US
dc.subjectSpectroscopyen_US
dc.subjectGraphiteen_US
dc.subjectScatteringen_US
dc.subjectFilmsen_US
dc.subjectOxideen_US
dc.titleTemperature effects on the Raman spectra of graphenes: dependence on the number of layers and dopingen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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