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Title: Collapse of the charge ordering gap of Nd0.5Sr0.5MnO3 in an applied magnetic field
Authors: Biswas, Amlan
Arulraj, Anthony
Raychaudhuri, A K
Rao, C N R
Keywords: Insulator-Metal Transition
Giant Magnetoresistance
Doped Lamno3
Issue Date: 14-Feb-2000
Publisher: IOP Publishing Ltd
Citation: Journal Of Physics: Condensed Matter 12(6), L101-L107 (2000)
Abstract: We report results of tunneling studies on the charge ordering compound Nd0.5Sr0.5MnO3 in a magnetic field up to 6 T and for temperature down to 25 K. We show that a gap (2 Delta(CO) approximate to 0.5 eV opens up in the density of state (DOS) at the Fermilevel (E-F) on charge ordering (T-CO = 150 K) which collapses in an applied magnetic field when the charge ordered state melts. There is a clear correspondence between the behaviour of the resistivity and the gap formation and its collapse in an applied magnetic field. We conclude that a gap in the DOS at E-F is necessary for the stability of the charge ordered state.
Description: Restricted Access
Other Identifiers: 0953-8984
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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