Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/603
Title: Electrical properties of ferroelectric YMnO3 films deposited on n-type Si(111) substrates
Authors: Parashar, S
Raju, A R
Rao, C N R
Victor, P
Krupanidhi, S B
Keywords: Nebulized Spray-Pyrolysis
Field-Effect Transistors
Charge-Limited Currents
Thin-Films
Si
Insulator
Ceramics
Lanio3
Mos
Issue Date: 7-Sep-2003
Publisher: IOP Publishing Ltd
Citation: Journal Of Physics D: Applied Physics 36(17), 2134-2140 (2003)
Abstract: YMnO3 thin films were grown on an n-type Si substrate by nebulized spray pyrolysis in the metal-ferroelectric-semiconductor (MFS) configuration. The capacitance-voltage characteristics of the film in the MFS structure exhibit hysteretic behaviour consistent with the polarization charge switching direction, with the memory window decreasing with increase in temperature. The density of the interface states decreases with increasing annealing temperature. Mapping of the silicon energy band gap with the interface states has been carried out. The leakage current, measured in the accumulation region, is lower in well-crystallized thin films and obeys a space-charge limited conduction mechanism. The calculated activation energy from the dc leakage current characteristics of the Arrhenius plot reveals that the activation energy corresponds to oxygen vacancy motion.
Description: Restricted Access
URI: http://hdl.handle.net/10572/603
Other Identifiers: 0022-3727
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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