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dc.contributor.authorSardar, K-
dc.contributor.authorRao, C N R-
dc.date.accessioned2012-02-15T10:42:57Z-
dc.date.available2012-02-15T10:42:57Z-
dc.date.issued2004-03-05-
dc.identifier0935-9648en_US
dc.identifier.citationAdvanced Materials 16(5), 425-429 (2004)en_US
dc.identifier.urihttp://hdl.handle.net/10572/437-
dc.descriptionRestricted Accessen_US
dc.description.abstractGaN nanocrystals (see Figure) of hexagonal structure and varying diameters have been prepared by the reaction of hexamethyldisilazane (HMDS) with gallium cupferron or GaCl3 under solvothermal conditions. The nanocrystals show a size-dependent photoluminescence band in the 260-320 nm region, characteristic of quantum confinement.en_US
dc.description.urihttp://dx.doi.org/10.1002/adma.200306050en_US
dc.language.isoenen_US
dc.publisherWILEY-VCH Verlag GmbHen_US
dc.rights© 2004 WILEY-VCH Verlag GmbH & Coen_US
dc.subjectGallium Nitrideen_US
dc.subjectPhotoluminescenceen_US
dc.subjectPrecursorsen_US
dc.titleNew Solvothermal Routes for GaN Nanocrystalsen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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