Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/408
Title: Negative differential resistance in GaN nanocrystals above room temperature
Authors: Chitara, Basant
Jebakumar, D S Ivan
Rao, C N R
Krupanidhi, S B
Keywords: Monte-Carlo Calculation
Gallium Nitride
Band Structures
Diodes
Performance
Threshold
Route
Light
Laser
Issue Date: 7-Oct-2009
Publisher: IOP Publishing Ltd
Citation: Nanotechnology 20(40), 405205-(1-4) (2009)
Abstract: Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current-voltage characteristics have been used to investigate this effect through a metal-semiconductor-metal (M-S-M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is similar to 7 V above room temperature.
Description: Restricted Access
URI: http://hdl.handle.net/10572/408
Other Identifiers: 0957-4484
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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