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dc.contributor.authorDas, Anindya-
dc.contributor.authorSood, A K-
dc.contributor.authorGovindaraj, A-
dc.contributor.authorSaitta, A Marco-
dc.contributor.authorLazzeri, Michele-
dc.contributor.authorMauri, Francesco-
dc.contributor.authorRao, C N R-
dc.date.accessioned2012-02-09T11:23:00Z-
dc.date.available2012-02-09T11:23:00Z-
dc.date.issued2007-09-28-
dc.identifier0031-9007en_US
dc.identifier.citationPhysical Review Letters 99(13), 136803-(1-4) (2007)en_US
dc.identifier.urihttp://hdl.handle.net/10572/366-
dc.description.abstractIn situ Raman experiments together with transport measurements have been carried out on carbon nanotubes as a function of gate voltage. In metallic tubes, a large increase in the Raman frequency of the G(-) band, accompanied by a substantial decrease of its linewidth, is observed with electron or hole doping. In addition, we see an increase in the Raman frequency of the G(+) band in semiconducting tubes. These results are quantitatively explained using ab initio calculations that take into account effects beyond the adiabatic approximation. Our results imply that Raman spectroscopy can be used as an accurate measure of the doping of both metallic and semiconducting nanotubes.en_US
dc.description.urihttp://dx.doi.org/10.1103/PhysRevLett.99.136803en_US
dc.language.isoenen_US
dc.publisherAmerican Physical Societyen_US
dc.rights© 2007 The American Physical Societyen_US
dc.subjectTransistoren_US
dc.titleDoping in Carbon Nanotubes Probed by Raman and Transport Measurementsen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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