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dc.contributor.authorSharma, R B-
dc.contributor.authorLate, D J-
dc.contributor.authorJoag, D S-
dc.contributor.authorGovindaraj, A-
dc.contributor.authorRao, C N R-
dc.identifier.citationChemical Physics Letters 428(1-3), 102–108 (2006)en_US
dc.descriptionRestricted Accessen_US
dc.description.abstractField electron emission (FE) properties of boron and nitrogen doped carbon nanotubes (CNTs) grown in situ on tungsten (W) tips and silicon substrates have been studied. For a total emission current of I mu A, the current density (J) was 4 A/cm(2) at 368 V/mu m for B-doped CNTs and at 320 V/mu m for N-doped CNTs grown on W tips, compared with the value of 1.5 A/cm(2) at 290 V/mu m for undoped CNTs. FE currents upto 400 mu A drawn from both B- and N-doped CNTs are stable for more than 3 h. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.publisherElsevier Science BVen_US
dc.rights© 2006 Elsevier BVen_US
dc.subjectLarge-Scale Synthesisen_US
dc.titleField emission properties of boron and nitrogen doped carbon nanotubesen_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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