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Title: Field emission properties of boron and nitrogen doped carbon nanotubes
Authors: Sharma, R B
Late, D J
Joag, D S
Govindaraj, A
Rao, C N R
Keywords: Large-Scale Synthesis
Issue Date: 8-Sep-2006
Publisher: Elsevier Science BV
Citation: Chemical Physics Letters 428(1-3), 102–108 (2006)
Abstract: Field electron emission (FE) properties of boron and nitrogen doped carbon nanotubes (CNTs) grown in situ on tungsten (W) tips and silicon substrates have been studied. For a total emission current of I mu A, the current density (J) was 4 A/cm(2) at 368 V/mu m for B-doped CNTs and at 320 V/mu m for N-doped CNTs grown on W tips, compared with the value of 1.5 A/cm(2) at 290 V/mu m for undoped CNTs. FE currents upto 400 mu A drawn from both B- and N-doped CNTs are stable for more than 3 h. (c) 2006 Elsevier B.V. All rights reserved.
Description: Restricted Access
Other Identifiers: 0009-2614
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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