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dc.contributor.advisorSundaresan, A.-
dc.contributor.authorDe, Chandan-
dc.identifier.citationDe, Chandan. 2018, Magnetoelectric and multiferroic properties of some perovskite oxides and other materials, Ph.D. thesis, Jawaharlal Nehru Centre for Advanced Scientific Research, Bengaluruen_US
dc.descriptionOpen accessen_US
dc.description.abstractMagnetic and ferroelectric materials are in the heart of the modern science and technology. Magnetic materials with switchable spontaneous magnetization (M) driven by an external magnetic field (H) have been widely used in data-storage industries such as magnetic random-access memories (MRAM.S.). The sensors and actuators in the electronic devices greatly depend on ferroelectric materials with spontaneous polarization reversible upon an external electric field (E). The coupled strain and polarization in the ferroelectric materials allow elastic energy to be converted into electric energy or vice versa. Another major application of ferroelectric material is ferroelectric random-access memories (FeRAM.S.) which is non-volatile and has high-speed memory access, superior feature to the semiconductor flash memories. Towards device miniaturization, combining more than one functionality in a single component is highly desirable. For this reason, it is a natural tendency that combining magnetic and ferroelectric properties in a single unit can generate the new generation memory devices, smart sensors and actuators. The coexistence of more than one ferroic ordering in a single device can in fact provide a synergistic effect which can create even new functionality.en_US
dc.publisherJawaharlal Nehru Centre for Advanced Scientific Researchen_US
dc.rights© 2018 JNCASRen_US
dc.subjectMagnetic materialsen_US
dc.titleMagnetoelectric and multiferroic properties of some perovskite oxides and other materialsen_US
dc.publisher.departmentChemistry and Physics of Materials Unit (CPMU)en_US
Appears in Collections:Student Theses (CPMU)

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