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|Title:||Luminescence properties of boron and nitrogen doped graphene quantum dots prepared from arc-discharge-generated doped graphene samples|
Rao, C. N. R.
Atomic, Molecular & Chemical Physics
|Publisher:||Elsevier Science Bv|
|Citation:||Dey, S; Govindaraj, A; Biswas, K; Rao, CNR, Luminescence properties of boron and nitrogen doped graphene quantum dots prepared from arc-discharge-generated doped graphene samples. Chemical Physics Letters 2014, 595, 203-208, http://dx.doi.org/10.1016/j.cplett.2014.02.012|
Chemical Physics Letters
|Abstract:||Substitution of heteroatoms in graphene is known to tailor its band gap. Another approach to alter the band gap of graphene is to create zero-dimensional graphene quantum dots (GQDs). Here we present the synthesis and photoluminescence properties of B-doped graphene quantum dots (B-GQDs) for the first time, having prepared the B-GQDs by chemical scissoring of B-doped graphene generated by arcdischarge in gas phase. We compare the photoluminescence properties of B-GQDs with nitrogen-doped GQDs and pristine GQDs. Besides, excitation wavelength independent PL emission, excellent upconversion of PL emission is observed in GQDs as well as B-and N-doped GQDs. (C) 2014 Elsevier B.V. All rights reserved.|
|Appears in Collections:||Research Papers (Kaniska Biswas)|
Research Papers (Prof. C.N.R. Rao)
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