Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/2345
Title: Synthesis and Characterization of Few-layer Nanosheets of GaN and Other Metal Nitrides
Authors: Sreedhara, M. B.
Vasu, K.
Rao, C. N. R.
Keywords: Inorganic & Nuclear Chemistry
Layered Compounds
Nanosheets
Nitridation
Metal Nitrides
Photoluminescence
Gallium
Chemical-Vapor-Deposition
Molybdenum Nitrides
Quality Gan
Thin-Films
Delta-Mon
Graphene
Nanocrystals
Transistors
Epitaxy
Routes
Issue Date: 2014
Publisher: Wiley-V C H Verlag Gmbh
Citation: Sreedhara, MB; Vasu, K; Rao, CNR, Synthesis and Characterization of Few-layer Nanosheets of GaN and Other Metal Nitrides. Zeitschrift Fur Anorganische Und Allgemeine Chemie 2014, 640 (14) 2737-2741, http://dx.doi.org/10.1002/zaac.201400386
Zeitschrift Fur Anorganische Und Allgemeine Chemie
640
14
Abstract: By making use of the fact that single- and few-layer nanosheets of GaS and GaSe are readily obtained by micromechanical cleavage because of their mica-like morphology, we were able to prepare GaN nanosheets by the reaction of these chalcogenide nanosheets with ammonia at 600-650 degrees C. The nitride nanosheets were characterized by transmission electron microscopy, atomic force microscopy, and other methods. Few-layer VN was obtained by high-temperature ammonolysis of exfoliated V2O5 sheets. Ammonolysis of MoO3 and MoS2 nanosheets yields the nitride nanosheets.
Description: Restricted Access
URI: http://hdl.handle.net/10572/2345
ISSN: 0044-2313
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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