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|Title:||Synthesis and Characterization of Few-layer Nanosheets of GaN and Other Metal Nitrides|
|Authors:||Sreedhara, M. B.|
Rao, C. N. R.
|Keywords:||Inorganic & Nuclear Chemistry|
|Publisher:||Wiley-V C H Verlag Gmbh|
|Citation:||Sreedhara, MB; Vasu, K; Rao, CNR, Synthesis and Characterization of Few-layer Nanosheets of GaN and Other Metal Nitrides. Zeitschrift Fur Anorganische Und Allgemeine Chemie 2014, 640 (14) 2737-2741, http://dx.doi.org/10.1002/zaac.201400386|
Zeitschrift Fur Anorganische Und Allgemeine Chemie
|Abstract:||By making use of the fact that single- and few-layer nanosheets of GaS and GaSe are readily obtained by micromechanical cleavage because of their mica-like morphology, we were able to prepare GaN nanosheets by the reaction of these chalcogenide nanosheets with ammonia at 600-650 degrees C. The nitride nanosheets were characterized by transmission electron microscopy, atomic force microscopy, and other methods. Few-layer VN was obtained by high-temperature ammonolysis of exfoliated V2O5 sheets. Ammonolysis of MoO3 and MoS2 nanosheets yields the nitride nanosheets.|
|Appears in Collections:||Research Papers (Prof. C.N.R. Rao)|
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