Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/2278
Title: Random Field Driven Spatial Complexity at the Mott Transition in VO2
Authors: Liu, Shuo
Phillabaum, B.
Carlson, E. W.
Dahmen, K. A.
Vidhyadhiraja, N. S.
Qazilbash, M. M.
Basov, D. N.
Keywords: Physics
Metal-Insulator-Transition
3D Ising-Model
Percolation Clusters
Critical-Behavior
Scaling Theory
Avalanches
Disorder
Surfaces
Systems
Noise
Issue Date: 2016
Publisher: American Physical Society
Citation: Liu, S.; Phillabaum, B.; Carlson, E. W.; Dahmen, K. A.; Vidhyadhiraja, N. S.; Qazilbash, M. M.; Basov, D. N., Random Field Driven Spatial Complexity at the Mott Transition in VO2. Physical Review Letters 2016, 116 (3), 5 http://dx.doi.org/10.1103/PhysRevLett.116.036401
Physical Review Letters
116
3
Abstract: We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric universal properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system.
Description: Restricted Access
URI: http://hdl.handle.net/10572/2278
ISSN: 0031-9007
Appears in Collections:Research Articles (Vidhyadhiraja N. S.)

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