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|Title:||Random Field Driven Spatial Complexity at the Mott Transition in VO2|
Carlson, E. W.
Dahmen, K. A.
Vidhyadhiraja, N. S.
Qazilbash, M. M.
Basov, D. N.
|Publisher:||American Physical Society|
|Citation:||Liu, S.; Phillabaum, B.; Carlson, E. W.; Dahmen, K. A.; Vidhyadhiraja, N. S.; Qazilbash, M. M.; Basov, D. N., Random Field Driven Spatial Complexity at the Mott Transition in VO2. Physical Review Letters 2016, 116 (3), 5 http://dx.doi.org/10.1103/PhysRevLett.116.036401|
Physical Review Letters
|Abstract:||We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric universal properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system.|
|Appears in Collections:||Research Articles (Vidhyadhiraja N. S.)|
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