Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/2217
Title: The origin of low thermal conductivity in Sn1-xSbxTe: phonon scattering via layered intergrowth nanostructures
Authors: Banik, Ananya
Vishal, Badri
Perumal, Suresh
Datta, Ranjan
Biswas, Kanishka
Keywords: Chemistry
Energy & Fuels
Engineering
Environmental Sciences & Ecology
High-Thermoelectric Performance
Density-Of-States
Bulk Thermoelectrics
Transport-Properties
Band Convergence
Solid-Solutions
Snte
Figure
Merit
Alloys
Issue Date: 2016
Publisher: Royal Society of Chemistry
Citation: Banik, A.; Vishal, B.; Perumal, S.; Datta, R.; Biswas, K., The origin of low thermal conductivity in Sn1-xSbxTe: phonon scattering via layered intergrowth nanostructures. Energy & Environmental Science 2016, 9 (6), 2011-2019 http://dx.doi.org/10.1039/c6ee00728g
Energy & Environmental Science
9
6
Abstract: Inorganic solids with low thermal conductivity are of great interest for thermoelectric applications. The formation of synthetic nanostructures by matrix encapsulation is one of the important strategies for thermal conductivity reduction through phonon scattering. Here, we report the reduction of lattice thermal conductivity near the theoretical minimum limit, kappa(min), in SnTe via spontaneous formation of nanodomains of the Sb-rich layered intergrowth SnmSb2nTe3n+m compounds, which are natural heterostructures. High-resolution transmission electron microscopy of Sn1-xSbxTe samples reveals the formation of endotaxial Sb rich nanoprecipitates (2-10 nm) along with super-structured intergrowth nanodomains (10-30 nm), which are the key features responsible for the significant reduction of lattice thermal conductivity in SnTe. This mechanism suggests a new avenue for the nanoscale engineering in SnTe to achieve low lattice thermal conductivities. Moreover, the presence of Sb improves the electronic transport properties by aliovalent cation doping which optimizes the hole concentration in SnTe. As a result, an enhanced thermoelectric figure of merit, zT, of similar to 1 has been achieved for the composition of Sn0.85Sb0.15Te at 800 K. The high zT sample exhibits the Vickers microhardness value of similar to 136 H-V which is double that of pristine SnTe and is significantly higher than those of the present state-of-the-art thermoelectric materials.
Description: Restricted Access
URI: http://hdl.handle.net/10572/2217
ISSN: 1754-5692
Appears in Collections:Research Articles (Ranjan Datta)
Research Papers (Kaniska Biswas)

Files in This Item:
File Description SizeFormat 
27.pdf
  Restricted Access
6.83 MBAdobe PDFView/Open Request a copy


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.