Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/2215
Title: Low frequency noise and photo-enhanced field emission from ultrathin PbBi2Se4 nanosheets
Authors: Suryawanshi, Sachin R.
Guin, Satya N.
Chatterjee, Arindom
Kashid, Vikas
More, Mahendra A.
Late, Dattatray J.
Biswas, Kanishka
Keywords: Materials Science
Physics
Total-Energy Calculations
Wave Basis-Set
Lab6 Nanowires
Single-Layer
Mos2
Arrays
Issue Date: 2016
Publisher: Royal Society of Chemistry
Citation: Suryawanshi, S. R.; Guin, S. N.; Chatterjee, A.; Kashid, V.; More, M. A.; Late, D. J.; Biswas, K., Low frequency noise and photo-enhanced field emission from ultrathin PbBi2Se4 nanosheets. Journal of Materials Chemistry C 2016, 4 (5), 1096-1103 http://dx.doi.org/10.1039/c5tc02993g
Journal of Materials Chemistry C
4
5
Abstract: Atomically thin two-dimensional layered materials have gained wide interest owing to their novel properties and potential for applications in nanoelectronic and optoelectronic devices. Here, we present the spectral analysis and photo-enhanced field emission studies of a layered intergrowth PbBi2Se4 nanosheet emitter, performed at the base pressure of similar to 1 x 10(-8) mbar. The emitter shows a turn-on field value of similar to 4.80 V mu m(-1), corresponding to an emission current density of similar to 1 mu A cm(-2). Interestingly, when the cathode was illuminated with visible light, it exhibited a lower turn-on field of B3.90 V mm(-1), and a maximum emission current density of similar to 893 mu A cm(-2) has been drawn at an applied electric field of similar to 8.40 V mu m(-1). Furthermore, the photo-enhanced emission current showed reproducible, step-like switching behavior in synchronous with ON-OFF switching of the illumination source. The emission current-time plots reveal excellent stability over a duration of similar to 6 h. Low-frequency noise is a significant limitation for the performance of nanoscale electronic devices. The spectral analysis performed on a Fast Fourier Transform (FFT) analyzer revealed that the observed noise is of 1/f(alpha) type, with the value of alpha similar to 0.99. The low frequency noise, photo-enhanced field emission, and reproducible switching behavior characterized with very fast rise and fall times propose the layered PbBi2Se4 nanosheet emitter as a new promising candidate for novel vacuum nano-optoelectronic devices.
Description: Restricted Access
URI: http://hdl.handle.net/10572/2215
ISSN: 2050-7526
Appears in Collections:Research Papers (Kaniska Biswas)

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