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dc.contributor.authorPerumal, Suresh
dc.contributor.authorRoychowdhury, Subhajit
dc.contributor.authorBiswas, Kanishka
dc.date.accessioned2017-01-24T06:36:53Z-
dc.date.available2017-01-24T06:36:53Z-
dc.date.issued2016
dc.identifier.citationPerumal, S.; Roychowdhury, S.; Biswas, K., High performance thermoelectric materials and devices based on GeTe. Journal of Materials Chemistry C 2016, 4 (32), 7520-7536 http://dx.doi.org/10.1039/c6tc02501cen_US
dc.identifier.citationJournal of Materials Chemistry Cen_US
dc.identifier.citation4en_US
dc.identifier.citation32en_US
dc.identifier.issn2050-7526
dc.identifier.urihttp://hdl.handle.net/10572/2214-
dc.descriptionRestricted Accessen_US
dc.description.abstractThermoelectric materials have received recent attention due to their ability to convert waste heat to electrical energy directly and reversibly. Inorganic materials, especially Bi2Te3, PbTe and Si-Ge based alloys, have been investigated in the temperature range of 300-1000 K, among which PbTe based materials have been extensively studied, and reported to be the leading thermoelectric materials for mid-temperature power generation. However, environmental concern limits their large scale production due to the toxic nature of Pb. As an alternative, GeTe-rich alloys such as TAGS (GeTe-AgSbTe2) have been largely investigated since the 1960s. Most recently, some of the new materials in the GeTe family have been introduced such as Ge0.87Pb0.13Te, the homologous series of Sb2Te3(GeTe)(n) and Ge0.9Sb0.1Te, and are reported to exhibit high thermoelectric performance, inherently formed nano and microstructure modulations, and high thermal and mechanical stability. These collective enhanced properties of GeTe-rich alloys have generated great interest in investigating further new GeTe based alloys for intermediate temperature thermoelectric applications. In order to provide the fundamental understanding, technological insights, and to further promote the GeTe based alloys, we hereby present a review on (i) the crystal structure, nano/microstructure, phase transition, electronic structure, and thermoelectric properties of GeTe, (ii) correlation of compositional and microstructure modulations and thermoelectric properties of doped GeTe, TAGS based alloys, Ge-Pb-Te materials, and Ge-Sb-Te materials, (iii) mechanical properties, (iv) past and present devices based on GeTe materials and (v) future directions.en_US
dc.description.uri2050-7534en_US
dc.description.urihttp://dx.doi.org/10.1039/c6tc02501cen_US
dc.language.isoEnglishen_US
dc.publisherRoyal Society of Chemistryen_US
dc.rights@Royal Society of Chemistry, 2016en_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysicsen_US
dc.subjectGermanium Antimony Telluridesen_US
dc.subjectValence-Band Convergenceen_US
dc.subjectPhase-Change Materialsen_US
dc.subjectSystem Pbte-Geteen_US
dc.subjectThermal-Conductivityen_US
dc.subjectMechanical-Propertiesen_US
dc.subjectBulk Thermoelectricsen_US
dc.subjectOptical-Propertiesen_US
dc.subjectCrystal-Structureen_US
dc.subjectPower-Generationen_US
dc.titleHigh performance thermoelectric materials and devices based on GeTeen_US
dc.typeReviewen_US
Appears in Collections:Research Papers (Kaniska Biswas)

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