Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/2210
Title: Large linear magnetoresistance in topological crystalline insulator Pb0.6Sn0.4Te
Authors: Roychowdhury, Subhajit
Ghara, Somnath
Guin, Satya N.
Sundaresan, A.
Biswas, Kanishka
Keywords: Chemistry
Topological crystalline insulator
Lead tin telluride
Linear magnetoresistance
Band inversion
Solid solution
Performance Bulk Thermoelectrics
Giant Magnetoresistance
Colossal Magnetoresistance
Nonsaturating Magnetoresistance
Bi2Te3
Snte
Oscillations
Convergence
Transition
Graphene
Issue Date: 2016
Publisher: Academic Press Inc Elsevier Science
Citation: Roychowdhury, S.; Ghara, S.; Guin, S. N.; Sundaresan, A.; Biswas, K., Large linear magnetoresistance in topological crystalline insulator Pb0.6Sn0.4Te. Journal of Solid State Chemistry 2016, 233, 199-204 http://dx.doi.org/10.1016/j.jssc.2015.10.029
Journal of Solid State Chemistry
233
Abstract: Classical magnetoresistance generally follows the quadratic dependence of the magnetic field at lower field and finally saturates when field is larger. Here, we report the large positive non-saturating linear magnetoresistance in topological crystalline insulator, Pb0.6Sn0.4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. Magnetoresistance value as high as similar to 200% was achieved at 3 K at magnetic field of 9 T. Linear magnetoresistance observed in Pb0.6Sn0.4Te is mainly governed by the spatial fluctuation carrier mobility due to distortions in the current paths in inhomogeneous conductor. (C) 2015 Elsevier Inc. All rights reserved.
Description: Restricted Access
URI: http://hdl.handle.net/10572/2210
ISSN: 0022-4596
Appears in Collections:Research Articles (Sundaresan A.)
Research Papers (Kaniska Biswas)

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