Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/2172
Title: Stable p-type conductivity in B and N co-doped ZnO epitaxial thin film
Authors: Sahu, Rajib
Gholap, Hari Bhau
Mounika, Gandi
Dileep, Krishnan
Vishal, Badri
Ghara, Somnath
Datta, Ranjan
Keywords: Physics
ZnO
thins films
doping
p-type conductivity
density functional theory
pulsed laser deposition
Pulsed-Laser Deposition
Electronic-Structure
Phase-Separation
Zinc-Oxide
Photoluminescence
Semiconductors
Gap
Issue Date: 2016
Publisher: Wiley-V C H Verlag Gmbh
Citation: Sahu, R.; Gholap, H. B.; Mounika, G.; Dileep, K.; Vishal, B.; Ghara, S.; Datta, R., Stable p-type conductivity in B and N co-doped ZnO epitaxial thin film. Physica Status Solidi B-Basic Solid State Physics 2016, 253 (3), 504-508 http://dx.doi.org/10.1002/pssb.201552625
Physica Status Solidi B-Basic Solid State Physics
253
3
Abstract: We report on the observation of stable p-type conductivity in B and N co-doped epitaxial ZnO thin films grown by pulsed laser deposition. Films grown at higher oxygen partial pressure (similar to 10(-1) Torr) shows p-type conductivity with a carrier concentration of similar to 3 x 10(16) cm(-3). This p-type conductivity is associated with the significant decrease in defect emission peaks due to the vacancy oxygen (V-O) and Schottky type-I native defects compared to films grown at low oxygen partial pressure (similar to 10(-5) Torr). The p-type conductivity is explained with the help of density functional theory (DFT) calculation considering off-stoichiometric BN1+x in the ZnO lattice. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Description: Restricted Access
URI: http://hdl.handle.net/10572/2172
ISSN: 0370-1972
Appears in Collections:Research Articles (Ranjan Datta)

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