Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/2138
Title: Image pixel device using integrated organic electronic components
Authors: Swathi, K.
Narayan, K. S.
Keywords: Physics
Solar-Cells
Large-Area
Polymer
Photodetectors
Transistor
Sensors
Light
Mode
Issue Date: 2016
Publisher: American Institute Physics
Citation: Swathi, K.; Narayan, K. S., Image pixel device using integrated organic electronic components. Applied Physics Letters 2016, 109 (19), 5 http://dx.doi.org/10.1063/1.4967505
Applied Physics Letters
109
19
Abstract: We report a solution processed, monolithically integrated device similar to an imaging pixel element used in complementary metal-oxide semiconductor (CMOS) based cameras. This integrated pixel essentially consists of a pair of organic photodiode (OPD) and organic field effect transistor (OFET). The signal generated by the light responsive OPD drives the OFET to different output states to quantify the light intensity. The prerequisite of a low operating voltage OFET (<2 V) was achieved using a bottom-gate, top-contact OFET consisting of a high mobility polymer semiconductor and a self-assembled hybrid dielectric layer. A bulk heterojunction blend was used as the photo-active layer in the OPD along with suitable buffer layers for charge extraction. The material parameters were optimized to realize a suitable structure which clearly demonstrated the interplay of the OPD and OFET operations, thereby forming a roadmap for all-organic CMOS arrays. Published by AIP Publishing.
Description: Restricted Access
URI: http://hdl.handle.net/10572/2138
ISSN: 0003-6951
Appears in Collections:Research Articles (Narayan K. S.)

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