Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/2094
Title: Atomic Layer Deposition of p-Type Epitaxial Thin Films of Undoped and N-Doped Anatase TiO2
Authors: Vasu, K.
Sreedhara, M. B.
Ghatak, J.
Rao, C. N. R.
Keywords: Materials Science
atomic layer deposition
epitaxial thin films
N-doped TiO2 thin films
p-type conductivity
room-temperature ferromagnetism
photoresponse
p-n homojunction
Room-Temperature Ferromagnetism
Sputtered Tioxny Films
Rutile
Nanostructures
Conductivity
Performance
Growth
Issue Date: 2016
Publisher: American Chemical Society
Citation: Vasu, K.; Sreedhara, M. B.; Ghatak, J.; Rao, C. N. R., Atomic Layer Deposition of p-Type Epitaxial Thin Films of Undoped and N-Doped Anatase TiO2. Acs Applied Materials & Interfaces 2016, 8 (12), 7897-7901 http://dx.doi.org/10.1021/acsami.6b00628
ACS Applied Materials & Interfaces
8
12
Abstract: Employing atomic layer deposition, we have grown p-type epitaxial undoped and N-doped' anatase TiO2(001) thin films on c-axis Al2O3 substrate. From X-ray diffraction and transmission electron microscopy studies, crystallographic relationships-between the film and the substrate are found to be (001)(TiO2)/(0001)(Al2O3) and [(1) over bar 10](TiO2)//[01 (1) over bar0]Al2O3. N-doping in TiO2 thin films enhances the hole concentration and mobility. The optical band gap of anatase TiO2 (3.23 eV) decreases to 3.07 eV upon N-doping. The epitaxial films exhibit room-temperature ferromagnetism and photoresponse. A TiO2-based homojunction diode was fabricated with rectification from the p-n junction formed between N-doped p-TiO2 and n-TiO2.
Description: Restricted Access
URI: http://hdl.handle.net/10572/2094
ISSN: 1944-8244
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

Files in This Item:
File Description SizeFormat 
287.pdf
  Restricted Access
1.88 MBAdobe PDFView/Open Request a copy


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.