Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/2075
Full metadata record
DC FieldValueLanguage
dc.contributor.authorKaradan, Prajith
dc.contributor.authorJohn, Siju
dc.contributor.authorAnappara, Aji A.
dc.contributor.authorNarayana, Chandrabhas
dc.contributor.authorBarshilia, Harish C.
dc.date.accessioned2017-01-24T06:17:35Z-
dc.date.available2017-01-24T06:17:35Z-
dc.date.issued2016
dc.identifier.citationKaradan, P.; John, S.; Anappara, A. A.; Narayana, C.; Barshilia, H. C., Evolution mechanism of mesoporous silicon nanopillars grown by metal-assisted chemical etching and nanosphere lithography: correlation of Raman spectra and red photoluminescence. Applied Physics a-Materials Science & Processing 2016, 122 (7), 10 http://dx.doi.org/10.1007/s00339-016-0203-8en_US
dc.identifier.citationApplied Physics A-Materials Science & Processingen_US
dc.identifier.citation122en_US
dc.identifier.citation7en_US
dc.identifier.issn0947-8396
dc.identifier.urihttp://hdl.handle.net/10572/2075-
dc.descriptionRestricted Accessen_US
dc.description.abstractWe have fabricated highly ordered, vertically aligned, high aspect ratio silicon nanopillars (SiNPLs) of diameter similar to 80 nm by combining metal-assisted chemical etching and nanosphere lithography. The evolution of surface morphology of porous silicon nanopillars has been explained, and the presence of mesoporous structures was detected on the top of silicon nanopillars using field emission scanning electron microscopy. The mesoporosity of the SiNPLs is confirmed by Brunauer-Emmett-Teller measurements. The peak shift and the splitting of optical phonon modes into LO and TO modes in the micro-Raman spectra of mesoporous SiNPLs manifest the presence of 2-3 nm porous Si nanocrystallites (P-SiNCs) on the top of SiNPLs and the size of crystallites was calculated using bond polarizability model for spherical phonon confinement. The origin of red luminescence is explained using quantum confinement (QC) and QC luminescent center models for the P-SiNCs, which is correlated with the micro-Raman spectra. Finally, we confirmed the origin of the red luminescence is from the P-SiNCs formed on surface of SiNPLs, highly desired for LED devices by suitably tailoring the substrate.en_US
dc.description.uri1432-0630en_US
dc.description.urihttp://dx.doi.org/10.1007/s00339-016-0203-8en_US
dc.languageEnglishen
dc.language.isoEnglishen_US
dc.publisherSpringeren_US
dc.rights@Springer, 2016en_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysicsen_US
dc.subjectNanowire Arraysen_US
dc.subjectPorous Siliconen_US
dc.subjectSi Nanowiresen_US
dc.subjectSolar-Cellsen_US
dc.subjectFabricationen_US
dc.subjectNanostructuresen_US
dc.subjectPhotovoltaicsen_US
dc.subjectPerformanceen_US
dc.subjectDiameteren_US
dc.subjectCatalysten_US
dc.titleEvolution mechanism of mesoporous silicon nanopillars grown by metal-assisted chemical etching and nanosphere lithography: correlation of Raman spectra and red photoluminescenceen_US
dc.typeArticleen_US
Appears in Collections:Research Articles (Chandrabhas N.)

Files in This Item:
File Description SizeFormat 
120.pdf
  Restricted Access
4.05 MBAdobe PDFView/Open Request a copy


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.