Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/2075
Title: Evolution mechanism of mesoporous silicon nanopillars grown by metal-assisted chemical etching and nanosphere lithography: correlation of Raman spectra and red photoluminescence
Authors: Karadan, Prajith
John, Siju
Anappara, Aji A.
Narayana, Chandrabhas
Barshilia, Harish C.
Keywords: Materials Science
Physics
Nanowire Arrays
Porous Silicon
Si Nanowires
Solar-Cells
Fabrication
Nanostructures
Photovoltaics
Performance
Diameter
Catalyst
Issue Date: 2016
Publisher: Springer
Citation: Karadan, P.; John, S.; Anappara, A. A.; Narayana, C.; Barshilia, H. C., Evolution mechanism of mesoporous silicon nanopillars grown by metal-assisted chemical etching and nanosphere lithography: correlation of Raman spectra and red photoluminescence. Applied Physics a-Materials Science & Processing 2016, 122 (7), 10 http://dx.doi.org/10.1007/s00339-016-0203-8
Applied Physics A-Materials Science & Processing
122
7
Abstract: We have fabricated highly ordered, vertically aligned, high aspect ratio silicon nanopillars (SiNPLs) of diameter similar to 80 nm by combining metal-assisted chemical etching and nanosphere lithography. The evolution of surface morphology of porous silicon nanopillars has been explained, and the presence of mesoporous structures was detected on the top of silicon nanopillars using field emission scanning electron microscopy. The mesoporosity of the SiNPLs is confirmed by Brunauer-Emmett-Teller measurements. The peak shift and the splitting of optical phonon modes into LO and TO modes in the micro-Raman spectra of mesoporous SiNPLs manifest the presence of 2-3 nm porous Si nanocrystallites (P-SiNCs) on the top of SiNPLs and the size of crystallites was calculated using bond polarizability model for spherical phonon confinement. The origin of red luminescence is explained using quantum confinement (QC) and QC luminescent center models for the P-SiNCs, which is correlated with the micro-Raman spectra. Finally, we confirmed the origin of the red luminescence is from the P-SiNCs formed on surface of SiNPLs, highly desired for LED devices by suitably tailoring the substrate.
Description: Restricted Access
URI: http://hdl.handle.net/10572/2075
ISSN: 0947-8396
Appears in Collections:Research Articles (Chandrabhas N.)

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