Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/2071
Title: Pressure-induced electronic topological transition in Sb2S3
Authors: Sorb, Y. A.
Rajaji, V.
Malavi, P. S.
Subbarao, U.
Halappa, P.
Peter, Sebastian C.
Karmakar, S.
Narayana, Chandrabhas
Keywords: Physics
electronic topological transition
high pressure
Raman spectroscopy
resistivity
Thermoelectric Properties
Insulators
Surface
Bi2Te3
Superconductivity
Temperature
Sb2Te3
Bi2Se3
Issue Date: 2016
Publisher: IoP Publishing Ltd
Citation: Sorb, Y. A.; Rajaji, V.; Malavi, P. S.; Subbarao, U.; Halappa, P.; Peter, S. C.; Karmakar, S.; Narayana, C., Pressure-induced electronic topological transition in Sb2S3. Journal of Physics-Condensed Matter 2016, 28 (1), 7 http://dx.doi.org/10.1088/0953-8984/28/1/015602
Journal of Physics-Condensed Matter
28
1
Abstract: We report the high-pressure vibrational properties and a pressure-induced electronic topological transition in the wide bandgap semiconductor Sb2S3 (E-g = 1.7-1.8 eV) using Raman spectroscopy, resistivity and x-ray diffraction (XRD) studies. In this report, high-pressure Raman spectroscopy and resistivity studies of Sb2S3 have been carried out to 22 GPa and 11 GPa, respectively. We observed the softening of phonon modes A(g)(2), A(g)(3) and B-2g and a sharp anomaly in their line widths at 4 GPa. The resistivity studies corroborate this anomaly around similar pressures. The changes in resistivity as well as Raman line widths can be ascribed to the strong phonon-phonon coupling, indicating clear evidence of isostructural electronic topological transition in Sb2S3. The previously reported pressure dependence of a/c ratio plot obtained also showed a minimum at similar to 5 GPa consistent with our high-pressure Raman and resistivity results.
Description: Restricted Access
URI: http://hdl.handle.net/10572/2071
ISSN: 0953-8984
Appears in Collections:Research Articles (Chandrabhas N.)
Research Papers (Sebastian C. Peter)

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