Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/2066
Title: Anharmonicity in light scattering by optical phonons in GaAs1-xBix
Authors: Joshya, R. S.
Rajaji, V.
Narayana, Chandrabhas
Mascarenhas, A.
Kini, R. N.
Keywords: Physics
Band-Gap
Gaasbi Alloys
Raman
Nitrogen
Bi
Semiconductors
Spectroscopy
Temperature
Dependence
Absorption
Issue Date: 2016
Publisher: American Institute Physics
Citation: Joshya, R. S.; Rajaji, V.; Narayana, C.; Mascarenhas, A.; Kini, R. N., Anharmonicity in light scattering by optical phonons in GaAs1-xBix. Journal of Applied Physics 2016, 119 (20), 5 http://dx.doi.org/10.1063/1.4952381
Journal of Applied Physics
119
20
Abstract: We present a Raman spectroscopic study of GaAs1-xBix epilayers grown by molecular beam epitaxy. We have investigated the anharmonic effect on the GaAs-like longitudinal optical phonon mode (LOGaAs') of GaAs1-xBix for different Bi concentrations at various temperatures. The results are analyzed in terms of the anharmonic damping effect induced by thermal and compositional disorder. We have observed that the anharmonicity increases with Bi concentration in GaAs1-xBix as evident from the increase in the anharmonicity constants. In addition, the anharmonic lifetime of the optical phonon decreases with increasing Bi concentration in GaAs1-xBix. Published by AIP Publishing.
Description: Restricted Access
URI: http://hdl.handle.net/10572/2066
ISSN: 0021-8979
Appears in Collections:Research Articles (Chandrabhas N.)

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