Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/2019
Title: Temperature driven p-n-p type conduction switching materials: current trends and future directions
Authors: Guin, Satya N.
Biswas, Kanishka
Keywords: Physical Chemistry
Atomic, Molecular & Chemical Physics
Silver(I) Chalcogenide Halides
High Thermoelectric Figure
Electrical-Properties
Phase-Transitions
Mixed Conductor
Performance
Ag10Te4Br3
Ag5Te2Cl1-XbRx
Nanocrystals
Crystal
Issue Date: 2015
Publisher: Royal Society of Chemistry
Citation: Physical Chemistry Chemical Physics
17
16
Guin, S. N.; Biswas, K., Temperature driven p-n-p type conduction switching materials: current trends and future directions. Physical Chemistry Chemical Physics 2015, 17 (16), 10316-10325.
Abstract: Modern technological inventions have been going through a "renaissance'' period. Development of new materials and understanding of fundamental structure-property correlations are the important steps to move further for advanced technologies. In modern technologies, inorganic semiconductors are the leading materials which are extensively used for different applications. In the current perspective, we present discussion on an important class of materials that show fascinating p-n-p type conduction switching, which can have potential applications in diodes or transistor devices that operate reversibly upon temperature or voltage change. We highlight the key concepts, present the current fundamental understanding and show the latest developments in the field of p-n-p type conduction switching. Finally, we point out the major challenges and opportunities in this field.
Description: Restricted access
URI: http://hdl.handle.net/10572/2019
ISSN: 1463-9076
Appears in Collections:Research Papers (Kaniska Biswas)

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