Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/2018
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dc.contributor.authorGuin, Satya N.
dc.contributor.authorBiswas, Kanishka
dc.date.accessioned2017-01-04T09:09:41Z-
dc.date.available2017-01-04T09:09:41Z-
dc.date.issued2015
dc.identifier.citationJournal of Materials Chemistry Cen_US
dc.identifier.citation3en_US
dc.identifier.citation40en_US
dc.identifier.citationGuin, S. N.; Biswas, K., Sb deficiencies control hole transport and boost the thermoelectric performance of p-type AgSbSe2. Journal of Materials Chemistry C 2015, 3 (40), 10415-10421.en_US
dc.identifier.issn2050-7526
dc.identifier.urihttp://hdl.handle.net/10572/2018-
dc.descriptionRestricted accessen_US
dc.description.abstractSilver antimony selenide, AgSbSe2, a Te free analogue of AgSbTe2, has been known to show a promising thermoelectric performance when it is doped with monovalent (M+) and divalent (M2+) cations in the Sb sublattice. Here, we report a significant enhancement of the thermoelectric performance of p-type nonstoichiometric AgSbSe2 through Sb deficiencies. Sb deficiencies markedly increase the carrier concentration in AgSbSe2 without the addition of any foreign dopant, which in turn enhances electrical conductivity in the 300-610 K temperature range. Enhancement in the electrical transport results in a remarkable improvement in the power factor (sigma S-2) values up to similar to 6.94 mu W cm(-1) K-2 at 610 K in AgSb1-xSe2. Notably, we have achieved a nearly constant sigma S-2 value of similar to 6 mu W cm(-1) K-2 in the 400-610 K temperature range in Sb deficient samples. Additionally, AgSbSe2 exhibits ultra-low thermal conductivity due to phonon scattering because of bond anharmonicity and a disordered cation sublattice. With superior electronic transport and ultra-low thermal conductivity, a peak ZT value of similar to 1 at 610 K was achieved for the AgSb0.9925Se2 and AgSb0.99Se2 samples. A maximum thermoelectric conversion efficiency (eta(max)) of similar to% was calculated by considering a virtual thermoelectric module consisting of the present p-type AgSb1-xSe2 and previously reported n-type AgBiSe2-xClx, by maintaining a temperature difference of Delta T = 400 K.en_US
dc.description.uri2050-7534en_US
dc.description.urihttp://dx.doi.org/10.1039/c5tc01429hen_US
dc.language.isoEnglishen_US
dc.publisherRoyal Society of Chemistryen_US
dc.rights?Royal Society of Chemistry, 2015en_US
dc.subjectMaterials Scienceen_US
dc.subjectApplied Physicsen_US
dc.subjectThermal-Conductivityen_US
dc.subjectBulk Thermoelectricsen_US
dc.subjectFigureen_US
dc.subjectMeriten_US
dc.subjectConvergenceen_US
dc.subjectAgBiSe2en_US
dc.subjectSnTeen_US
dc.titleSb deficiencies control hole transport and boost the thermoelectric performance of p-type AgSbSe2en_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Kaniska Biswas)

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