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Title: Promising thermoelectric performance in n-type AgBiSe2: effect of aliovalent anion doping
Authors: Guin, Satya N.
Srihari, Velaga
Biswas, Kanishka
Keywords: Physical Chemistry
Energy & Fuels
Materials Science
Bulk Thermoelectrics
Issue Date: 2015
Publisher: Royal Society of Chemistry
Citation: Journal of Materials Chemistry A
Guin, S. N.; Srihari, V.; Biswas, K., Promising thermoelectric performance in n-type AgBiSe2: effect of aliovalent anion doping. Journal of Materials Chemistry A 2015, 3 (2), 648-655.
Abstract: Thermoelectric materials can convert untapped heat to electrical energy, and thus, it will have a significant role in future energy management. Recent industrial applications demand efficient thermoelectric materials which are made of non-toxic and inexpensive materials. Here, we report promising thermoelectric performance in halogen (Cl/Br/I) doped n-type bulk AgBiSe2, which is a Pb-free material and consists of earth abundant elements. Aliovalent halide ion doping (2-4 mol%) in the Se2- sublattice of AgBiSe2 significantly increases the n-type carrier concentration in AgBiSe2, thus improving the temperature dependent electronic transport properties. Temperature dependent cation order-disorder transition tailors the electronic transport properties in AgBiSe1.98X0.02 (X = Cl, Br and I) samples. Bond anharmonicity and disordered cation sublattice effectively scatter heat carrying phonon in the high temperature cubic phase of AgBiSe1.98X0.02 (X = Cl, Br and I), which limits the lattice thermal conductivity to a low value of similar to 0.27 W m(-1) K-1 at 810 K. The highest thermoelectric figure of merit, ZT, value of similar to 0.9 at similar to 810 K has been achieved for the AgBiSe1.98Cl0.02 sample, which is promising among the n-type metal selenide based thermoelectric materials.
Description: Restricted access
ISSN: 2050-7488
Appears in Collections:Research Papers (Kaniska Biswas)

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