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Title: Room-temperature bandlike transport and Hall effect in a high-mobility ambipolar polymer
Authors: Senanayak, Satyaprasad P.
Ashar, A. Z.
Kanimozhi, Catherine
Patil, Satish
Narayan, K. S.
Keywords: Condensed Matter Physics
Field-Effect Transistors
High Carrier Density
Conjugated Polymers
Semiconducting Polymers
Organic Transistors
Issue Date: 2015
Publisher: American Physical Society
Citation: Physical Review B
Senanayak, S. P.; Ashar, A. Z.; Kanimozhi, C.; Patil, S.; Narayan, K. S., Room-temperature bandlike transport and Hall effect in a high-mobility ambipolar polymer. Physical Review B 2015, 91 (11), 16.
Abstract: The advent of a new class of high-mobility semiconducting polymers opens up a window to address fundamental issues in electrical transport mechanism such as transport between localized states versus extended state conduction. Here, we investigate the origin of the ultralow degree of disorder (E-a similar to 16 meV) and the "bandlike" negative temperature (T) coefficient of the field effect electron mobility: mu(e)(FET) (T) in a high performance (mu(e)(FET) > 2.5 cm(2) V-1 s(-1)) diketopyrrolopyrrole based semiconducting polymer. Models based on the framework of mobility edge with exponential density of states are invoked to explain the trends in transport. The temperature window over which the system demonstrates delocalized transport was tuned by a systematic introduction of disorder at the transport interface. Additionally, the Hall mobility (mu(e)(Hall)) extracted from Hall voltage measurements in these devices was found to be comparable to field effect mobility (mu(e)(FET)) in the high T bandlike regime. Comprehensive studies with different combinations of dielectrics and semiconductors demonstrate the effectiveness of rationale molecular design, which emphasizes uniform-energetic landscape and low reorganization energy.
Description: Restricted access
ISSN: 1098-0121
Appears in Collections:Research Articles (Narayan K. S.)

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