Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/1896
Title: Noise spectroscopy of polymer transistors
Authors: Harsh, Rishav
Narayan, K. S.
Keywords: Applied Physics
Thin-Film Transistors
Field-Effect Transistors
Low-Frequency Noise
1/F Noise
Electronic Devices
Charge-Transport
Pentacene
Reliability
Issue Date: 2015
Publisher: American Institute of Physics
Citation: Journal of Applied Physics
118
20
Harsh, R.; Narayan, K. S., Noise spectroscopy of polymer transistors. Journal of Applied Physics 2015, 118 (20), 5.
Abstract: Noise studies constitute an important approach to study polymer based field effect transistors (FETs) from the perspective of disorder physics as well as device application. The current fluctuations in an all organic solution-processable FET in different regimes of operation (I-V) are measured and analyzed. The intrinsic transport noise is sizable and readily observed in the current time series measurements. The ensuing current spectrum (S-r(f)) exhibits a typical 1/f characteristics. It is observed that this noise amplitude scales with respect to current bias and indicative of mobility as well as number fluctuations at dielectric-semiconductor interface. FETs with leakage (lossy) dielectric layer indicate characteristic noise spectrum features which can serve as a diagnostic tool to monitor device stability. (C) 2015 AIP Publishing LLC.
Description: Restricted access
URI: http://hdl.handle.net/10572/1896
ISSN: 0021-8979
Appears in Collections:Research Articles (Narayan K. S.)

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