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dc.contributor.authorParashar, S-
dc.contributor.authorEbenso, E E-
dc.contributor.authorRaju, A R-
dc.contributor.authorRao, C N R-
dc.date.accessioned2012-12-03T11:21:25Z-
dc.date.available2012-12-03T11:21:25Z-
dc.date.issued2000-
dc.identifier0038-1098en_US
dc.identifier.citationSolid State Communications 114(5), 295–299 (2000)en_US
dc.identifier.urihttp://hdl.handle.net/10572/1195-
dc.descriptionRestricted Accessen_US
dc.description.abstractThin films of charge-ordered manganates, Pr1-xCaxMnO3 (x = 0.3, 0.4) are shown to undergo electric current-induced insulator-metal (I-M) transitions, the transition temperature increasing with the current. The occurrence of I-M transitions in these films without prior laser irradiation is noteworthy. The films show interesting memory effects and some non-linearity in the I-V characteristics. The magnetic-field induced I-M transition in the films is independent of the current employed. At low magnetic fields, or at low currents, resistance oscillations occur due to temporal fluctuations between resistive states. (C) 2000 Elsevier Science Ltd. All rights reserved.en_US
dc.description.urihttp://dx.doi.org/10.1016/S0038-1098(00)00059-4en_US
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.rights© 2000 Elsevier Science Ltden_US
dc.subjectmagnetically ordered materialsen_US
dc.subjectthin filmsen_US
dc.subjectelectronic tranporten_US
dc.titleInsulator–metal transitions induced by electric and magnetic fields, in thin films of charge-ordered Pr1-xCaxMnO3en_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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