Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/1189
Title: Synthesis and optical properties of In-doped GaN nanocrystals
Authors: Bhat, S V
Biswas, Kanishka
Rao, C N R
Keywords: nanostructures
chemical synthesis
optical properties
Chemical-Vapor-Deposition
Ingan Thin-Films
Quantum Dots
Raman-Scattering
Photoluminescence
Layers
Emitters
Issue Date: Feb-2007
Publisher: Pergamon-Elsevier Science Ltd
Citation: Solid State Communications 141(6), 325-328 (2007)
Abstract: Indium-doped GaN nanocrystals with 5% and 10% In have been prepared by a low temperature solvothermal method using hexamethyldisilazane as the nitriding reagent. The nanocrystals show Raman bands at lower frequencies compared to GaN. Photoluminescence spectra of the In-doped GaN nanocrystals exhibit an increase in the FWHM with the decrease in the PL band energy, the band energy itself decreasing with increase in the In content. (C) 2006 Elsevier Ltd. All rights reserved.
Description: Restricted Access
URI: http://hdl.handle.net/10572/1189
Other Identifiers: 0038-1098
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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