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Title: Synthesis and optical properties of In-doped GaN nanocrystals
Authors: Bhat, S V
Biswas, Kanishka
Rao, C N R
Keywords: nanostructures
chemical synthesis
optical properties
Ingan Thin-Films
Quantum Dots
Issue Date: Feb-2007
Publisher: Pergamon-Elsevier Science Ltd
Citation: Solid State Communications 141(6), 325-328 (2007)
Abstract: Indium-doped GaN nanocrystals with 5% and 10% In have been prepared by a low temperature solvothermal method using hexamethyldisilazane as the nitriding reagent. The nanocrystals show Raman bands at lower frequencies compared to GaN. Photoluminescence spectra of the In-doped GaN nanocrystals exhibit an increase in the FWHM with the decrease in the PL band energy, the band energy itself decreasing with increase in the In content. (C) 2006 Elsevier Ltd. All rights reserved.
Description: Restricted Access
Other Identifiers: 0038-1098
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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