Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/1060
Title: Formation of B, Al, Ga, and Si nitrides from their oxides: a reactive laser ablation study
Authors: Raina, G
Kulkarni, G U
Rao, C N R
Keywords: electronic materials
nitrides
oxides
laser annealing
Infrared-Spectra
Carbon Nanotube
Nitrogen-Atoms
Nanowires
Boron
Deposition
Clusters
Nanorods
Ammonia
Vapor
Issue Date: 2-Jul-2004
Publisher: Pergamon-Elsevier Science Ltd
Citation: Materials Research Bulletin 39(9), 1271-1277 (2004)
Abstract: Nitrides such as Si3N4 and GaN are made by the reaction of the respective oxide with N2 or NH3. In order to understand the mechanism of formation of nitrides, reactive laser ablation of B2O3, Al2O3, Ga2O3, and SiO2 in pure form, as well as in mixture with carbon, has been carried out in an atmosphere of nitrogen or ammonia in a pulsed supersonic jet. The reaction of N2 with SiO2 gives nitridic species such as Si2Ny (y≤5) in the vapor phase. On reaction with N2 in the presence of carbon, B2O3 and Ga2O3 yield species of the type BxNy and GaNy, respectively. Nitridic species are preponderant in the reaction with ammonia only in the case of SiO2. Al2O3 predominantly gives oxynitridic species under the reaction conditions examined.
Description: Restricted Access
URI: http://hdl.handle.net/10572/1060
Other Identifiers: 0025-5408
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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