Please use this identifier to cite or link to this item:
Title: Properties of nanostructured GaN prepared by different methods
Authors: Kam, Kinson C
Deepak, F L
Gundiah, Gautam
Rao, C N R
Cheetham, A K
Keywords: Inorganic Nanowires
nanostructured GaN
Issue Date: Oct-2004
Publisher: Elsevier Science BV
Citation: Solid State Sciences 6(10), 1107-1112 (2004)
Abstract: Various methods have been employed to prepare nanostructured GaN exhibiting reasonable surface areas. The methods include ammonolysis of γ-Ga2O3 or Ga2O3 prepared in the presence of a surfactant, and the reaction of a mixture of Ga2O3 and Ga(acac)3 with NH3. The latter reaction was also carried out in the presence of H3BO3. All the methods yield good GaN samples as characterized by X-ray diffraction, electron microscopy and photoluminescence measurements. Relatively high surface areas were obtained with the GaN samples prepared by the ammonolysis of γ-Ga2O3 (53 m2 g−1), and of Ga2O3 prepared in the presence of a surfactant (66 m2 g−1). GaN obtained by the reaction of NH3 with a mixture of Ga2O3, Ga(acac)3 and boric acid gave a surface area of 59 m2 g−1. GaN nanoparticles prepared by the nitridation of mesoporous Ga2O3 samples generally retain some porosity.
Description: Restricted Access
Other Identifiers: 1293-2558
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

Files in This Item:
File Description SizeFormat 
  Restricted Access
475.23 kBAdobe PDFView/Open Request a copy

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.