Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/1057
Title: Magnetic, optical and transport properties of GaMnN films
Authors: Sardar, K
Raju, A R
Bansal, B
Venkataraman, V
Rao, C N R
Keywords: thin films
magnetic films and multilayers
semiconductors
electronic transport
luminescence
Ferromagnetism
Semiconductor
Gan
Issue Date: 2003
Publisher: Pergamon-Elsevier Science Ltd
Citation: Solid State Communications 125(1), 55-57 (2003)
Abstract: GaMnN films with 1–3% Mn deposited on Si(100) and Al2O3(0001) substrates, by the technique of nebulized spray pyrolysis by employing acetylacetonate precursors, have been characterized by X-ray diffraction, photoluminescence spectra and other techniques. The films are ferromagnetic and show magnetic hysteresis. The ferromagnetic Tc increases with the Mn content, with the 3% Mn film showing a Tc of ∼250 K. Anomalous Hall effect is observed below Tc where the films exhibit a small negative magnetoresistance.
Description: Restricted Access
URI: http://hdl.handle.net/10572/1057
Other Identifiers: 0038-1098
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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