Please use this identifier to cite or link to this item: http://lib.jncasr.ac.in:8080/jspui/handle/10572/1048
Title: Preparation and characterization of oriented III-V nitride thin films by nebulized spray pyrolysis
Authors: Raju, A R
Sardar, Kripasindhu
Rao, C N R
Keywords: Thin films
GaN
InGaN
AlGaN
AlN
nebulized spray pyrolysis
cathodoluminescence characteristics
Issue Date: Dec-2002
Publisher: Elsevier Science Ltd
Citation: Materials Science in Semiconductor Processing 4(6), 549-553 (2002)
Abstract: Thin films of GaN, InGaN, AlGaN and AlN on Si(1 0 0) as well as on Al2O3(0 0 0 1) single crystalline substrates have been deposited at 1123, 1023, 1173 and 1173 K, respectively, by employing the simple inexpensive technique of nebulized spray pyrolysis. GaN films deposited on Si are polycrystalline where as the films deposited on Al2O3 are epitaxial. GaN epitaxial films show cathodoluminescence characteristics. Photoluminescence studies show that all the films are of high quality.
Description: Restricted Access
URI: http://hdl.handle.net/10572/1048
Other Identifiers: 1369-8001
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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