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dc.contributor.authorRao, C N R-
dc.contributor.authorCheetham, A K-
dc.date.accessioned2012-11-21T08:56:16Z-
dc.date.available2012-11-21T08:56:16Z-
dc.date.issued1996-04-19-
dc.identifier0036-8075en_US
dc.identifier.citationScience 272(5260), 369-370 (1996)en_US
dc.identifier.urihttp://hdl.handle.net/10572/1031-
dc.descriptionEditorial Material. Restricted Access.en_US
dc.description.abstractSome materials exhibit large changes in electrical resistance in the presence of a magnetic field, and this change can be used in applications from sensor technology to magnetic data storage. In their Perspective, Rao and Cheetham discuss magnetoresistance in perovskite manganates, where the effect is unusually strong. Much has been learned about these materials, and this understanding is driving the search for new materials with even more impressive properties.en_US
dc.description.urihttp://dx.doi.org/10.1126/science.272.5260.369en_US
dc.language.isoenen_US
dc.publisherAmerican Association for the Advancement of Scienceen_US
dc.rights© 1996 American Association for the Advancement of Scienceen_US
dc.subjectGiant magnetoresistanceen_US
dc.subjectsensor technologyen_US
dc.subjectperovskite manganatesen_US
dc.subjecttransition metal oxidesen_US
dc.titleGiant magnetoresistance in transition metal oxidesen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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